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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
for ultra-fast crystal orientation, crystal alignment in production, quality control, rocking curve measurements, material...
state-of-the-art XRD system for automatic single crystal ingot orientation, tilting and alignment for grinding
Wafer sorting, crystal orientation, resistivity, optical notch and flat determination
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Mono- and Multi-crystalline wafer lifetime measurement device
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
for production and quality control of monocrystalline Si ingots,bricks and wafers
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
for contactless and temperature dependent lifetime and LBIC measurements
High Resolution Resistivity Mapping Tool for process control and quality assurance measurements
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
High sensitivity, high resolution surface photovoltage (SPV) measurement instrument
High sensitivity, high resolution surface photovoltage spectroscopy (SPS) instrument with a variable energy excitation source...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
Silicon carbide (SiC) high power, high voltage semiconductor devices lead the way not only for superfast chargers and on-board chargers for electrical vehicles (EV), but also power drive trains and power converters for traction applications such as light rails, trams and subways. Traction applications, as well as industrial motor drives, require power semiconductor switches with blocking voltages of 1200 V, 1700 V, 3300 V or even 4500 V (6500 V is still being explored).
Reliability, lifetime and safety of the high power, high voltage semiconductor devices are the key parameters to control at the moment, where the commercially available 150 mm SiC wafers still suffer from some fundamental quality issues related to defects in bandgap of the SiC semiconductor. These issues will still remain on 200 mm SiC wafers, and it is therefore of extreme importance to be able to measure and report the state of the defects before, during and after device fabrication.
The SPVcheck tool equipped with 3 UV light sources with centre wavelengths 355 nm, 365 nm and 450/660 nm is the ideal platform for epitaxial SiC wafer characterization, because it can be used to check the fundamental bandgap edge in a very elegant and fast way. The 450 nm or 660 nm wavelength is used as a baseline reference measurement, because the energy is too low to excite carriers in the SiC material. The 355 nm and 365 nm UV light sources are applied at the same time to the epitaxial SiC wafer, thereby creating a broad square like pulse covering energies in 3.25 to 3.55 eV in one shot.
The transient SPV is measured in the time range from 10 ns and up to 10 ms. If the epitaxial layer on the SiC wafer has too many defects, the excitation of carriers will be weakened and the change in signal over time will be smaller. A perfect epitaxial layer, on the other hand, will have a higher output signal and, more importantly, sharp energy transition peaks in the ms range.
An additional advantage of the square like energy pulse is the fact that the absorption coefficient of SiC is growing linearly with the square of the energy and is heavily temperature dependent. Therefore, by adding a temperature stage, the penetration depth of the UV light can be varied over a large range. Obviously the 355 nm and the 365 nm light sources does not need to switched on at the same time – they can be switched on and off in a modulated pattern with up to 1 kHz switching frequency or very long on and off cycles.
µPCD/MDP (QSS)
PID
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